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IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1
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Part Number IPN95R2K0P7ATMA1
OEMstron Part # IPN95R2K0P7ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 950V 4A SOT223
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPN95R2K0P7ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPN95R2K0P7ATMA1 Specifications

Part Number IPN95R2K0P7ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ P7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 400V
FET Feature -
Power Dissipation (Max) 7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-3

IPN95R2K0P7ATMA1 Documents

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