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IPI80N04S3H4AKSA1

IPI80N04S3H4AKSA1
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Part Number IPI80N04S3H4AKSA1
OEMstron Part # IPI80N04S3H4AKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 40V 80A TO262-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI80N04S3H4AKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPI80N04S3H4AKSA1 Specifications

Part Number IPI80N04S3H4AKSA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI80N04S3H4AKSA1 Documents

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Part Number Description Stock

IPI80N04S3H4AKSA1

D# IPI80N04S3H4AKSA1-ND

Infineon Technologies AG

MOSFET N-CH 40V 80A TO262-3

Limited Supply - Call

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