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IPI057N08N3 G

IPI057N08N3 G
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Part Number IPI057N08N3 G
OEMstron Part # IPI057N08N3-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 80V 80A TO262-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI057N08N3 G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPI057N08N3 G Specifications

Part Number IPI057N08N3 G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 40V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI057N08N3 G Documents

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IPI057N08N3 G

Infineon Technologies AG

MOSFET N-CH 80V 80A TO262-3

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Infineon Technologies AG

MOSFET N-CH 80V 80A TO262-3

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