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IPD60R650CEATMA1

IPD60R650CEATMA1
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Part Number IPD60R650CEATMA1
OEMstron Part # IPD60R650CEATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V TO-252-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD60R650CEATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD60R650CEATMA1 Specifications

Part Number IPD60R650CEATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ CE
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R650CEATMA1 Documents

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Part Number Description Stock

IPD60R650CEATMA1

D# IPD60R650CEATMA1TR-ND

Infineon Technologies AG

MOSFET N-CH 600V 7A TO252-3

Limited Supply - Call
Part Number Description Stock

IPD60R650CEATMA1

Infineon Technologies AG

In stock shipping within 2days

10260
Part Number Description Stock

IPD60R650CEATMA1

Infineon Technologies AG

shipping today

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