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| Part Number | IPD60N10S4L12ATMA1 |
| OEMstron Part # | IPD60N10S4L12ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH TO252-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD60N10S4L12ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD60N10S4L12ATMA1 Specifications
| Part Number | IPD60N10S4L12ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA | |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V | |
| Vgs (Max) | ±16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 94W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-313 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD60N10S4L12ATMA1 Documents
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| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# V72:2272_06384117 Infineon Technologies AG |
Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) DPAK T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# IPD60N10S4L12ATMA1 Infineon Technologies AG |
Trans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60N10S4L12ATMA1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# C1S322000468179 Infineon Technologies AG |
MOSFET RoHS: Compliant
pbFree: Yes
Min Qty: 5
Container: Cut Tape
|
29 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# IPD60N10S4L12ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 100V 60A TO252-3 |
5660 In Stock |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# 2725850RL Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 100V, TO-252 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 Infineon Technologies AG |
IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313 RoHS: Compliant
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 INFINEON TECHNOLOGIES |
OEM/CM QUOTES ONLY | NO BROKERS |
43500 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# 13AC9043 Infineon Technologies AG |
MOSFET, N-CH, 100V, 60A, 175DEG C, 94W, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, On Resistance Rds(on):0.0098ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
2516 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# 31266549 Infineon Technologies AG |
Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) DPAK T/R |
Americas - 2577 |
| Part Number | Description | Stock |
|
IPD60N10S4L12ATMA1 D# 2725850 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 100V, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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| In Stock | 52,349 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
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