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IPD082N10N3GATMA1

IPD082N10N3GATMA1
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For Reference Only

Part Number IPD082N10N3GATMA1
OEMstron Part # IPD082N10N3GATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 80A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD082N10N3GATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD082N10N3GATMA1 Specifications

Part Number IPD082N10N3GATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD082N10N3GATMA1 Documents

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Part Number Description Stock

IPD082N10N3GATMA1

D# V72:2272_06384005

Infineon Technologies AG

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R

Americas - 39
Part Number Description Stock

IPD082N10N3GATMA1

D# IPD082N10N3GATMA1

Infineon Technologies AG

Trans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD082N10N3GATMA1)

RoHS: Compliant
Americas - 0
Part Number Description Stock

IPD082N10N3GATMA1

D# IPD082N10N3GATMA1CT-ND

Infineon Technologies AG

MOSFET N-CH 100V 80A TO252-3

298 In Stock
Part Number Description Stock

IPD082N10N3GATMA1

D# 2709872

Infineon Technologies AG

MOSFET, N-CH, 100V, 80A, TO-252

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
3262
Part Number Description Stock

IPD082N10N3GATMA1

Infineon Technologies AG

Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK

RoHS: Contact Manufacturer
pbFree: Yes
0 Reel
Part Number Description Stock

IPD082N10N3GATMA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

23200
Part Number Description Stock

IPD082N10N3GATMA1

D# XSKDRABV0052437

Infineon Technologies AG

20000
Part Number Description Stock

IPD082N10N3GATMA1

D# 12AC9706

Infineon Technologies AG

MOSFET, N-CH, 100V, 80A, 175DEG C, 125W, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:80A, On Resistance Rds(on):0.007ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
278
Part Number Description Stock

IPD082N10N3GATMA1

Infineon Technologies AG

OEM/CM ONLY

56
Part Number Description Stock

IPD082N10N3GATMA1

D# 34386453

Infineon Technologies AG

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R

Americas - 39
Part Number Description Stock

IPD082N10N3GATMA1

D# 2709872

Infineon Technologies AG

MOSFET, N-CH, 100V, 80A, TO-252

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
25

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