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IPD040N03LGBTMA1

IPD040N03LGBTMA1
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Part Number IPD040N03LGBTMA1
OEMstron Part # IPD040N03LGBTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 90A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD040N03LGBTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD040N03LGBTMA1 Specifications

Part Number IPD040N03LGBTMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD040N03LGBTMA1 Documents

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Part Number Description Stock

IPD040N03LGBTMA1

Infineon Technologies AG

N-KANAL POWER MOS - Tape and Reel

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Part Number Description Stock

IPD040N03LGBTMA1

D# IPD040N03LGBTMA1-ND

Infineon Technologies AG

MOSFET N-CH 30V 90A TO252-31

Limited Supply - Call
Part Number Description Stock

IPD040N03LGBTMA1

D# 7545459

Infineon Technologies AG

N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK Infineon IPD040N03LGBTMA1, PK

Min Qty: 5
Container: Package
150

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