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| Part Number | IPB80N06S2L11ATMA1 |
| OEMstron Part # | IPB80N06S2L11ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 55V 80A TO263-3 |
| Lifecycle | Discontinued |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB80N06S2L11ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPB80N06S2L11ATMA1 Specifications
| Part Number | IPB80N06S2L11ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Discontinued | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 60A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 93µA | |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2075pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 158W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB80N06S2L11ATMA1 Documents
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| Part Number | Description | Stock |
|
IPB80N06S2L11ATMA1 D# IPB80N06S2L11ATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 55V 80A TO263-3 |
Limited Supply - Call |
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