Semiconductors
Passive Components
Sensors
Power
Optoelectronics
For Reference Only
| Part Number | IPB80N06S209ATMA1 |
| OEMstron Part # | IPB80N06S209ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 55V 80A TO263-3 |
| Lifecycle | Discontinued |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB80N06S209ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPB80N06S209ATMA1 Specifications
| Part Number | IPB80N06S209ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Discontinued | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 125µA | |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 190W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB80N06S209ATMA1 Documents
Industry Leaders in Quality
Cooperation comes from trust,
And trust is based on quality.
Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPB80N06S209ATMA1 D# IPB80N06S209ATMA1 Infineon Technologies AG |
- Bulk (Alt: IPB80N06S209ATMA1) RoHS: Not Compliant
|
Americas - 319000 |
| Part Number | Description | Stock |
|
IPB80N06S209ATMA1 D# 2156-IPB80N06S209ATMA1-ND Rochester Electronics LLC |
MOSFET N-CH 55V 80A TO263-3-2 |
319000 In Stock |
| Part Number | Description | Stock |
|
IPB80N06S2-09 D# 726-IPB80N06S209 Infineon Technologies AG |
MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS RoHS: Compliant
|
848 |
| Part Number | Description | Stock |
|
IPB80N06S209ATMA1 Infineon Technologies AG |
IPB80N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant
|
319000 |
The Products You May Be Interested In
 |
NP90N03VHG-E1-AY | MOSFET N-CH 30V 90A TO-252 | 133 More on Order |
|
IXTV72N30T | MOSFET N-CH 300V 72A PLUS220 | 449 More on Order |
 |
NTD6600N-001 | MOSFET N-CH 100V 12A IPAK | 235 More on Order |
|
TPC8036-H(TE12L,QM | MOSFET N-CH 30V 18A 8-SOIC | 178 More on Order |
 |
FQB7N10LTM | MOSFET N-CH 100V 7.3A D2PAK | 364 More on Order |
 |
TSM60N380CZ C0G | MOSFET N-CHANNEL 600V 11A TO220 | 5702 More on Order |
 |
FDMB668P | MOSFET P-CH 20V 6.1A MICROFET8 | 217 More on Order |
|
SIS862ADN-T1-GE3 | MOSFET N-CH 60V PP 52A 1212-8 | 8593 More on Order |
 |
IRLR014NPBF | MOSFET N-CH 55V 10A DPAK | 258 More on Order |
 |
RRS100N03TB1 | MOSFET N-CH 30V 10A 8-SOIC | 476 More on Order |
|
FDR838P | MOSFET P-CH 20V 8A SSOT-8 | 497 More on Order |
 |
FQI13N06LTU | MOSFET N-CH 60V 13.6A I2PAK | 484 More on Order |
Quick Inquiry
| In Stock | 347 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Add to Shopping Cart
Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
OEMstron will offer the most competitive prices for you, please refer to the quotations.
Contact Us
- CALL US
86-755-83232896
- SKYPE
- Message
Please feel free to contact us for details.
Our Certificates
