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IPB60R060C7ATMA1

IPB60R060C7ATMA1
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For Reference Only

Part Number IPB60R060C7ATMA1
OEMstron Part # IPB60R060C7ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 650V 35A TO263-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB60R060C7ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPB60R060C7ATMA1 Specifications

Part Number IPB60R060C7ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ C7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 400V
FET Feature -
Power Dissipation (Max) 162W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

IPB60R060C7ATMA1 Documents

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Part Number Description Stock

IPB60R060C7ATMA1

D# IPB60R060C7ATMA1

Infineon Technologies AG

Transistor MOSFET N-CH 600V 35A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R060C7ATMA1)

RoHS: Compliant
Americas - 0
Part Number Description Stock

IPB60R060C7ATMA1

D# SP001385008

Infineon Technologies AG

Transistor MOSFET N-CH 600V 35A 3-Pin TO-263 T/R (Alt: SP001385008)

RoHS: Compliant
Europe - 0
Part Number Description Stock

IPB60R060C7ATMA1

D# IPB60R060C7ATMA1CT-ND

Infineon Technologies AG

MOSFET N-CH 650V 35A TO263-3

540 In Stock
Part Number Description Stock

IPB60R060C7ATMA1

D# 2986356

Infineon Technologies AG

MOSFET, N-CH, 600V, 35A, 162W, TO-263

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
29
Part Number Description Stock

IPB60R060C7ATMA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

2198
Part Number Description Stock

IPB60R060C7ATMA1

D# 726-IPB60R060C7ATMA1

Infineon Technologies AG

MOSFET HIGH POWER_NEW

RoHS: Compliant
63
Part Number Description Stock

IPB60R060C7ATMA1

D# 93AC7104

Infineon Technologies AG

MOSFET, N-CH, 600V, 35A, 162W, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.052ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power RoHS Compliant: Yes

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
29
Part Number Description Stock

IPB60R060C7ATMA1

Infineon Technologies AG

OEM/CM ONLY

350
Part Number Description Stock

IPB60R060C7ATMA1

D# 2986356

Infineon Technologies AG

MOSFET, N-CH, 600V, 35A, 162W, TO-263

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
29

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