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IPB50CN10NGATMA1

IPB50CN10NGATMA1
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For Reference Only

Part Number IPB50CN10NGATMA1
OEMstron Part # IPB50CN10NGATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 20A TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB50CN10NGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPB50CN10NGATMA1 Specifications

Part Number IPB50CN10NGATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 50V
FET Feature -
Power Dissipation (Max) 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB50CN10NGATMA1 Documents

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Part Number Description Stock

IPB50CN10NGATMA1

D# IPB50CN10NGATMA1

Infineon Technologies AG

Trans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R - Bulk (Alt: IPB50CN10NGATMA1)

RoHS: Not Compliant
Americas - 3000
Part Number Description Stock

IPB50CN10NGATMA1

D# 2156-IPB50CN10NGATMA1-ITTR-ND

Rochester Electronics LLC

MOSFET N-CH 100V 20A TO263-3

3000 In Stock
Part Number Description Stock

IPB50CN10NGATMA1

Infineon Technologies AG

OptlMOS N-Channel Power MOSFET

RoHS: Compliant
3000

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