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IPB47N10S33ATMA1

IPB47N10S33ATMA1
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Part Number IPB47N10S33ATMA1
OEMstron Part # IPB47N10S33ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 47A TO263-3
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models IPB47N10S33ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPB47N10S33ATMA1 Specifications

Part Number IPB47N10S33ATMA1
Brand Infineon Technologies
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
FET Feature -
Power Dissipation (Max) 175W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB47N10S33ATMA1 Documents

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Part Number Description Stock

IPB47N10S33ATMA1

D# 2156-IPB47N10S33ATMA1-ND

Rochester Electronics LLC

MOSFET N-CH 100V 47A TO263-3-2

446 In Stock
Part Number Description Stock

IPB47N10S-33

D# 726-IPB47N10S33

Infineon Technologies AG

MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS

RoHS: Compliant
491
Part Number Description Stock

IPB47N10S33ATMA1

Infineon Technologies AG

IPB47N10 - SIPMOS, 100V N-Channel Power MOSFET

RoHS: Compliant
446

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