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| Part Number | IMW120R090M1HXKSA1 |
| OEMstron Part # | IMW120R090M1HXKSA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | COOLSIC MOSFETS 1200V |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IMW120R090M1HXKSA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 13 - May 18 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IMW120R090M1HXKSA1 Specifications
| Part Number | IMW120R090M1HXKSA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolSiC™ | |
| FET Type | N-Channel | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1.2kV | |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V | |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA | |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 18V | |
| Vgs (Max) | +23V, -7V | |
| Input Capacitance (Ciss) (Max) @ Vds | 707pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 115W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247-3-41 | |
| Package / Case | TO-247-3 |
IMW120R090M1HXKSA1 Documents
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