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| Part Number | FQD2N60CTM-WS |
| OEMstron Part # | FQD2N60CTM-WS |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 600V 1.9A |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | FQD2N60CTM-WS PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
FQD2N60CTM-WS Specifications
| Part Number | FQD2N60CTM-WS | |
| Brand | ON Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 950mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D-Pak | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FQD2N60CTM-WS Documents
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