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E3M0120090D

E3M0120090D
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Part Number E3M0120090D
OEMstron Part # E3M0120090D
Manufacturer Cree/Wolfspeed
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description E-SERIES 900V, 120 MOHM, G3 SIC
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models E3M0120090D PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

E3M0120090D Specifications

Part Number E3M0120090D
Brand Cree/Wolfspeed
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Cree/Wolfspeed
Series Automotive, AEC-Q101, E
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 15V
Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
FET Feature -
Power Dissipation (Max) 97W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3

E3M0120090D Documents

E3M0120090D, E3M0120090D Datasheet (Total Pages: 10, Size: 694.67 KB)
E3M0120090D Datasheet CoverE3M0120090D Datasheet Page 2E3M0120090D Datasheet Page 3E3M0120090D Datasheet Page 4E3M0120090D Datasheet Page 5E3M0120090D Datasheet Page 6E3M0120090D Datasheet Page 7E3M0120090D Datasheet Page 8E3M0120090D Datasheet Page 9E3M0120090D Datasheet Page 10
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