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For Reference Only
| Part Number | CSD19535KTT |
| OEMstron Part # | CSD19535KTT |
| Manufacturer | Texas Instruments |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V 200A TO263 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | CSD19535KTT PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Apr 22 - Apr 27 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
CSD19535KTT Specifications
| Part Number | CSD19535KTT | |
| Brand | Texas Instruments | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ||
| Series | NexFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7930pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DDPAK/TO-263-3 | |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
CSD19535KTT Documents
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| Part Number | Description | Stock |
|
CSD19535KTT D# V36:1790_07248863 Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R |
Americas - 0 |
|
CSD19535KTTT D# V36:1790_07248864 Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
CSD19535KTT D# 296-45538-2-ND Texas Instruments |
MOSFET N-CH 100V 200A DDPAK |
On Order |
|
CSD19535KTTT D# 296-41135-1-ND Texas Instruments |
MOSFET N-CH 100V 200A DDPAK |
2330 In Stock |
| Part Number | Description | Stock |
|
CSD19535KTT Texas Instruments |
In stock shipping within 2days |
1283 |
| Part Number | Description | Stock |
|
CSD19535KTTT Texas Instruments |
OEM/CM QUOTES ONLY | NO BROKERS |
115 |
|
CSD19535KTT Texas Instruments |
OEM/CM QUOTES ONLY | NO BROKERS |
3312 |
| Part Number | Description | Stock |
|
CSD19535KTT Texas Instruments |
OEM/CM ONLY |
2522 |
|
CSD19535KTTT Texas Instruments |
OEM/CM ONLY |
222 |
| Part Number | Description | Stock |
|
CSD19535KTT Texas Instruments |
N-Channel 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3 RoHS: Compliant
|
3000 |
| Part Number | Description | Stock |
|
CSD19535KTT Texas Instruments |
OEM/CM Immediate delivery |
3000 |
| Part Number | Description | Stock |
|
CSD19535KTT D# 595-CSD19535KTT Texas Instruments |
MOSFET RoHS: Compliant
|
936 |
|
CSD19535KTTT D# 595-CSD19535KTTT Texas Instruments |
MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant
|
511 |
| Part Number | Description | Stock |
|
CSD19535KTT Texas Instruments |
OEM/CM ONLY |
19099 |
|
CSD19535KTTT Texas Instruments |
OEM/CM ONLY |
3016 |
| Part Number | Description | Stock |
|
CSD19535KTT Texas Instruments |
IN stock Immediate delivery |
3015 |
| Part Number | Description | Stock |
|
CSD19535KTTT Texas Instruments |
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm |
337 |
|
CSD19535KTT Texas Instruments |
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm |
9,877 |
| Part Number | Description | Stock |
|
CSD19535KTT Fairchild Semiconductor Corporation |
shipping today |
483 |
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Quick Inquiry
| In Stock | 1,374 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 3.4475 | $ 3.4475 |
| 100 | $ 3.4475 | $ 344.7500 |
| 500 | $ 3.4475 | $ 1,723.7500 |
| 1000 | $ 3.4475 | $ 3,447.5000 |
| 2500 | $ 3.4475 | $ 8,618.7500 |
OEMstron will offer the most competitive prices for you, please refer to the quotations.
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