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For Reference Only
| Part Number | BSZ180P03NS3EGATMA1 |
| OEMstron Part # | BSZ180P03NS3EGATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 30V 39.6A TSDSON-8 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSZ180P03NS3EGATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSZ180P03NS3EGATMA1 Specifications
| Part Number | BSZ180P03NS3EGATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 39.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3.1V @ 48µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2220pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.1W (Ta), 40W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8 | |
| Package / Case | 8-PowerTDFN |
BSZ180P03NS3EGATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# V72:2272_06390926 Infineon Technologies AG |
Trans MOSFET P-CH 30V 9A 8-Pin TSDSON EP T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# BSZ180P03NS3EGATMA1 Infineon Technologies AG |
Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ180P03NS3EGATMA1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# BSZ180P03NS3EGATMA1TR-ND Infineon Technologies AG |
MOSFET P-CH 30V 9A/39.5A TSDSON |
On Order |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# 2617460RL Infineon Technologies AG |
MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# 726-BSZ180P03NS3EGAT Infineon Technologies AG |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 RoHS: Compliant
|
4845 |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# 97Y1272 Infineon Technologies AG |
MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-39.6A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.0135ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 Infineon Technologies AG |
OEM/CM ONLY |
1595 |
| Part Number | Description | Stock |
|
BSZ180P03NS3EGATMA1 D# 2617460 Infineon Technologies AG |
MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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| Quote Limit | No Limit |
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