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| Part Number | BSZ086P03NS3EGATMA1 |
| OEMstron Part # | BSZ086P03NS3EGATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 30V 40A TSDSON-8 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSZ086P03NS3EGATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSZ086P03NS3EGATMA1 Specifications
| Part Number | BSZ086P03NS3EGATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 40A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3.1V @ 105µA | |
| Gate Charge (Qg) (Max) @ Vgs | 57.5nC @ 10V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4785pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-8 | |
| Package / Case | 8-PowerTDFN |
BSZ086P03NS3EGATMA1 Documents
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