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For Reference Only
| Part Number | BSP297 E6327 |
| OEMstron Part # | BSP297-E6327 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 200V 660MA SOT-223 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSP297 E6327 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSP297 E6327 Specifications
| Part Number | BSP297 E6327 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V | |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA | |
| Gate Charge (Qg) (Max) @ Vgs | 16.1nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 357pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223-4 | |
| Package / Case | TO-261-4, TO-261AA |
BSP297 E6327 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
BSP297E6327 Infineon Technologies AG |
982 | |
|
BSP297 E6327 Infineon Technologies AG |
420 |
| Part Number | Description | Stock |
|
BSP297 E6327 Infineon Technologies AG |
MOSFET N-CH 200V 660MA SOT-223 |
Contact Us |
| Part Number | Description | Stock |
|
BSP297E6327 Siemens |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant
|
Europe - 590 |
| Part Number | Description | Stock |
|
BSP297 E6327 D# BSP297E6327-ND Infineon Technologies AG |
MOSFET N-CH 200V 660MA SOT223-4 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
BSP297E6327 Infineon Technologies AG |
In stock shipping within 2days |
3000 |
| Part Number | Description | Stock |
|
BSP297E6327 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
14160 |
| Part Number | Description | Stock |
|
BSP297 E6327 Infineon Technologies AG |
In stock |
420 |
| Part Number | Description | Stock |
|
BSP297E6327 Infineon Technologies AG |
OEM/CM Immediate delivery |
3000 |
|
BSP297 E6327 Infineon Technologies AG |
OEM/CM Immediate delivery |
22500 |
| Part Number | Description | Stock |
|
BSP297 E6327 D# NS-BSP297 E6327 Infineon Technologies AG |
OEM/CM ONLY |
9696 |
| Part Number | Description | Stock |
|
BSP297E6327 Siemens |
0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET |
70 |
| Part Number | Description | Stock |
|
BSP297E6327 Infineon Technologies AG |
OEM/CM ONLY |
12329 |
| Part Number | Description | Stock |
|
BSP297E6327 Infineon Technologies AG |
IN stock Immediate delivery |
3015 |
|
BSP297 E6327 Infineon Technologies AG |
IN stock Immediate delivery |
22485 |
| Part Number | Description | Stock |
|
BSP297 E6327 Pulse Engineering Inc |
shipping today |
696 |
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| In Stock | 215 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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