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| Part Number | BSO615NGHUMA1 |
| OEMstron Part # | BSO615NGHUMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 60V 2.6A 8SOIC |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSO615NGHUMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSO615NGHUMA1 Specifications
| Part Number | BSO615NGHUMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A | |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 2V @ 20µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | PG-DSO-8 |
BSO615NGHUMA1 Documents
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| Minimum | 1 |
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