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| Part Number | SISF02DN-T1-GE3 |
| OEMstron Part # | SISF02DN-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Arrays |
| Description | MOSFET DUAL N-CH 25V 1212-8 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SISF02DN-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 13 - May 18 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
SISF02DN-T1-GE3 Specifications
| Part Number | SISF02DN-T1-GE3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Arrays | |
| Manufacturer | Vishay Siliconix | |
| Series | TrenchFET® Gen IV | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Continuous Drain (Id) @ 25°C | 30.5A (Ta), 60A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 10V | |
| Power - Max | 5.2W (Ta), 69.4W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® 1212-8SCD | |
| Supplier Device Package | PowerPAK® 1212-8SCD |
SISF02DN-T1-GE3 Documents
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