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| Part Number | BSM180C12P2E202 |
| OEMstron Part # | BSM180C12P2E202 |
| Manufacturer | Rohm Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | BSM180C12P2E202 IS A SIC (SILICO |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSM180C12P2E202 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSM180C12P2E202 Specifications
| Part Number | BSM180C12P2E202 | |
| Brand | Rohm Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | +22V, -6V | |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1360W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | Module | |
| Package / Case | Module |
BSM180C12P2E202 Documents
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| In Stock | 221 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 722.2029 | $ 722.2029 |
| 100 | $ 722.2029 | $ 72,220.2900 |
| 500 | $ 722.2029 | $ 361,101.4500 |
| 1000 | $ 722.2029 | $ 722,202.9000 |
| 2500 | $ 722.2029 | $ 1,805,507.2500 |
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