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BSC882N03MSGATMA1

BSC882N03MSGATMA1
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Part Number BSC882N03MSGATMA1
OEMstron Part # BSC882N03MSGATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 34V 22A TDSON-8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models BSC882N03MSGATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSC882N03MSGATMA1 Specifications

Part Number BSC882N03MSGATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN

BSC882N03MSGATMA1 Documents

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Part Number Description Stock

BSC882N03MSGATMA1

D# BSC882N03MSGATMA1

Infineon Technologies AG

- Bulk (Alt: BSC882N03MSGATMA1)

RoHS: Not Compliant
Americas - 35000
Part Number Description Stock

BSC882N03MSGATMA1

D# 2156-BSC882N03MSGATMA1-ND

Rochester Electronics LLC

MOSFET N-CH 34V 22A/100A TDSON

35000 In Stock
Part Number Description Stock

BSC882N03MSGATMA1

Infineon Technologies AG

Power Field-Effect Transistor, 22A, 34V, 0.0033ohm, N-Channel, MOSFET

RoHS: Compliant
35000

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