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| Part Number | BSC882N03LSGATMA1 |
| OEMstron Part # | BSC882N03LSGATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH TDSON-8 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSC882N03LSGATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSC882N03LSGATMA1 Specifications
| Part Number | BSC882N03LSGATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 34V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8-1 | |
| Package / Case | 8-PowerTDFN |
BSC882N03LSGATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# V36:1790_06384706 Infineon Technologies AG |
OPTIMOS 3 M-SERIES POWER-MOSFET |
Americas - 0 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# BSC882N03LSGATMA1 Infineon Technologies AG |
Trans MOSFET N-CH 34V 100A 8-Pin TDSON - Bulk (Alt: BSC882N03LSGATMA1) RoHS: Compliant
|
Americas - 5000 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# 2156-BSC882N03LSGATMA1-ND Rochester Electronics LLC |
MOSFET N-CH 34V TDSON-8-1 |
5000 In Stock |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# 2781055 Infineon Technologies AG |
TRANSITIONAL MOSFETS RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
5000 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 Infineon Technologies AG |
LV POWER MOS RoHS: Contact Manufacturer
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
5750 |
| Part Number | Description | Stock |
|
BSC882N03LS G D# 726-BSC882N03LSG Infineon Technologies AG |
MOSFET N-Ch 34V 100A SON-8 RoHS: Compliant
|
4998 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# 68AC4409 Infineon Technologies AG |
TRANSITIONAL MOSFETS, Transistor Polarity:N Channel, Drain Source Voltage Vds:34V, On Resistance Rds(on):4.2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Dissipation Pd:-, Transistor Case Style:-, No. of RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
5000 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 Infineon Technologies AG |
N-Channel Power MOSFET RoHS: Compliant
|
5000 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 Infineon Technologies AG |
OEM/CM ONLY |
5095 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# 53364235 Infineon Technologies AG |
OPTIMOS 3 M-SERIES POWER-MOSFET |
Americas - 10000 |
| Part Number | Description | Stock |
|
BSC882N03LSGATMA1 D# 2781055 Infineon Technologies AG |
TRANSITIONAL MOSFETS RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
5000 |
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| In Stock | 118 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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