Semiconductors
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For Reference Only
| Part Number | BSB012N03LX3 G |
| OEMstron Part # | BSB012N03LX3-G |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 30V 180A 2WDSON |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | BSB012N03LX3 G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 24 - May 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
BSB012N03LX3 G Specifications
| Part Number | BSB012N03LX3 G | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 180A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 169nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 16900pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ | |
| Package / Case | 3-WDSON |
BSB012N03LX3 G Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
BSB012N03LX3G D# BSB012N03LX3G Infineon Technologies AG |
Trans MOSFET N-CH 30V 39A 7-Pin WDSON - Bulk (Alt: BSB012N03LX3G) RoHS: Compliant
|
Americas - 6282 |
|
BSB012N03LX3GXUMA1 D# BSB012N03LX3GXUMA1 Infineon Technologies AG |
- Bulk (Alt: BSB012N03LX3GXUMA1) RoHS: Compliant
|
Americas - 5000 |
| Part Number | Description | Stock |
|
BSB012N03LX3GXUMA1 D# SP000597846 Infineon Technologies AG |
(Alt: SP000597846) |
Europe - 0 |
| Part Number | Description | Stock |
|
BSB012N03LX3 G Infineon Technologies AG |
N-CH 30V 180A 1.2mOhm CanPAK RoHSconf |
Contact Us |
| Part Number | Description | Stock |
|
BSB012N03LX3G D# 2156-BSB012N03LX3G-ND Rochester Electronics LLC |
N-CHANNEL POWER MOSFET |
6282 In Stock |
|
BSB012N03LX3GXUMA1 D# 2156-BSB012N03LX3GXUMA1-ND Rochester Electronics LLC |
N-CHANNEL POWER MOSFET |
5000 In Stock |
|
BSB012N03LX3 G D# BSB012N03LX3GTR-ND Infineon Technologies AG |
MOSFET N-CH 30V 39A/180A 2WDSON |
Limited Supply - Call |
| Part Number | Description | Stock |
|
BSB012N03LX3G Intersil Corporation |
In stock shipping within 2days |
400 |
| Part Number | Description | Stock |
|
BSB012N03LX3G Rochester Electronics LLC |
OEM/CM QUOTES ONLY | NO BROKERS |
7751 |
|
BSB012N03LX3GXUMA1 Rochester Electronics LLC |
OEM/CM QUOTES ONLY | NO BROKERS |
5750 |
| Part Number | Description | Stock |
|
BSB012N03LX3G Intersil Corporation |
OEM/CM Immediate delivery |
400 |
| Part Number | Description | Stock |
|
BSB012N03LX3 G D# NS-BSB012N03LX3 G Infineon Technologies AG |
OEM/CM ONLY |
10041 |
| Part Number | Description | Stock |
|
BSB012N03LX3G Infineon Technologies AG |
Power Field-Effect Transistor, 39A, 30V, 0.0012ohm, N-Channel, MOSFET RoHS: Compliant
|
6282 |
|
BSB012N03LX3GXUMA1 Infineon Technologies AG |
Power Field-Effect Transistor, 39A, 30V, 0.0012ohm, N-Channel, MOSFET RoHS: Compliant
|
5000 |
| Part Number | Description | Stock |
|
BSB012N03LX3G Intersil Corporation |
IN stock Immediate delivery |
395 |
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| In Stock | 259 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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