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| Part Number | 2SK3565(Q,M) |
| OEMstron Part # | 2SK3565-Q-M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 900V 5A TO-220SIS |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2SK3565(Q,M) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
2SK3565(Q Specifications
| Part Number | 2SK3565(Q,M) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | π-MOSIV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 45W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220SIS | |
| Package / Case | TO-220-3 Full Pack |
2SK3565(Q,M) Documents
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| Part Number | Description | Stock |
|
2SK3565(Q,M) D# 2SK3565(Q,M) Toshiba America Electronic Components |
Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: 2SK3565(Q,M)) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
2SK3565(Q,M) D# 2SK3565QM-ND Toshiba America Electronic Components |
MOSFET N-CH 900V 5A TO220SIS |
Temporarily Out of Stock |
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