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| Part Number | 2SK2009TE85LF |
| OEMstron Part # | 2SK2009TE85LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 30V 0.2A SMINI |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2SK2009TE85LF PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
2SK2009TE85LF Specifications
| Part Number | 2SK2009TE85LF | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50MA, 2.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 3V | |
| FET Feature | - | |
| Power Dissipation (Max) | 200mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SC-59-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
2SK2009TE85LF Documents
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