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| Part Number | 2SJ610(TE16L1,NQ) |
| OEMstron Part # | 2SJ610-TE16L1-NQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 250V 2A PW-MOLD |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2SJ610(TE16L1,NQ) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
2SJ610(TE16L1 Specifications
| Part Number | 2SJ610(TE16L1,NQ) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.55Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 381pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 20W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PW-MOLD | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
2SJ610(TE16L1,NQ) Documents
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| Part Number | Description | Stock |
|
2SJ610(TE16L1,NQ) D# 2SJ610(TE16L1,NQ)-ND Toshiba America Electronic Components |
MOSFET P-CH 250V 2A PW-MOLD |
Limited Supply - Call |
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