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| Part Number | 2N6661-E3 |
| OEMstron Part # | 2N6661-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 90V 0.86A TO-205 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | 2N6661-E3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
2N6661-E3 Specifications
| Part Number | 2N6661-E3 | |
| Brand | Vishay Siliconix | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 90V | |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-39 | |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
2N6661-E3 Documents
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| Part Number | Description | Stock |
|
2N6661-E3 Vishay Siliconix |
TO205 NCH MOSFET 90V 4R |
Contact Us |
| Part Number | Description | Stock |
|
2N6661-E3 D# 2N6661-E3-ND Vishay Siliconix |
MOSFET N-CH 90V 860MA TO39 |
Limited Supply - Call |
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| Quote Limit | No Limit |
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| Minimum | 1 |
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