Vishay introduces AEC-Q101 certified 100 V automotive grade P-channel MOSFETs

     Vishay Intertechnology today announced the launch of its new AEC-Q101-certified 100 V p channel TrenchFET® MOSFET-- SQJ211ELP to improve power density and energy efficiency in automotive applications. Vishay Siliconix SQJ211ELP is not only the industry's first Gull-wing lead structure 5 mm x 6 mm compact PowerPAK SO-8L package device, but also its on-resistance at 10 Vis only 30 m, which is the industry's best.

     The new automotive-grade MOSFETs offer a 26% and 46% reduction in on-resistance and a 50% and 76% reduction in footprint, respectively, compared to the closest DPAK and D2PAK packaged competitors. The SQJ211ELP low on-resistance helps to reduce on-power consumption, thus saving energy, and the excellent gate charge at 10 V is only 45 nC, reducing gate drive losses.

     Operating at +175°C, the new MOSFET meets the robustness and reliability requirements of automotive applications such as reverse polarity protection, battery management, high-side load switching and LED lighting. In addition, the SQJ211ELP Gull-wing lead structure helps improve automatic optical inspection (AOI) function, eliminates mechanical stress, and improves board level reliability.

     The device's 100 V rating meets the safety margin required for a variety of common input voltage rails for 12 V, 24 V, and 48 V systems. In addition, as a P-channel MOSFET, SQJ211ELP simplifies gate drive design without the need to configure the charge pump required for n-channel devices. Mosfets are in lead-free (Pb) packages, halogen-free, RoHS compliant, and 100% Rg and UIS tested.