Vishay Introduces Newest 4th Generation 600 V E-Series MOSFET Device---SiHK045N60E

     Vishay Intertechnology, Inc. announced the launch of the latest fourth-generation 600 V E-series power MOSFET device, the SiHK045N60E. Vishay Siliconix's n-channel SiHK045N60E on-resistance is 27 % lower than previous generation 600 V E-Series MOSFETs, providing a high-efficiency solution for communications, server and data center power applications while achieving a gate charge reduction of 60 %. As a result, the product of gate charge and on-resistance reaches the industry-leading level in similar devices, which is a key indicator (FOM) for 600 V MOSFETs in power conversion applications.

     Vishay's rich MOSFET technology fully supports the power conversion process, covering a variety of new electronic systems requiring high voltage input to low voltage output. With the introduction of the SiHK045N60E and the forthcoming release of the fourth-generation 600 V E-series products, companies can address requirements for improved energy efficiency and power density early in the design of power system architectures—including power factor correction and hard-switching AC/DC converter topologies.

     SiHK045N60E adopts Vishay's latest high-efficiency E-series superjunction technology, with typical on-resistance of only 0.043 Ω at 10 V, and ultra-low gate charge down to 65 nC. The device has a FOM of 2.8 Ω*nC, which is 3.4 % lower than its close MOSFET competitor. The SiHK045N60E has an effective output capacitance Co(er) of 117 pF, which helps improve switching performance. These performance parameters mean reduced conduction and switching losses, resulting in energy savings. The junction-to-case thermal resistance RthJC of the SiHK045N60E is 0.45 C/W, which is 11.8 % lower than that of the nearest competing devices, and has better thermal performance.

     Housed in a PowerPAK® 10x12 package, the device is RoHS compliant, halogen free, withstands overvoltage transients in avalanche mode, and is guaranteed to pass UIS testing 100 % of the limit.