UnitedSiC introduces the industry's best 6mΩ SiC FETs

     UnitedSiC, Inc., has released the industry's best 750V, 6mΩ devices, responding to power designers' demand for higher performance, more efficient SiC FETs. The new 6mΩ device has an RDS(on) value less than half that of the closest SiC MOSFETs competing and also offers a robust 5μs short-circuit tolerance rating. The products announced today include nine new device/package options in the 750V SiC FET family with ratings of 6, 9, 11, 23, 33 and 44mΩ.

     All devices are available in TO-247-4L packages, while 18, 23, 33, 44 and 60mΩ devices are also available in TO-247-3L packages. This 750V extension family complements the existing 18 and 60mΩ devices by providing designers with more device options and greater design flexibility, allowing for the best price/performance tradeoff while maintaining sufficient design margin and circuit robustness.

     UnitedSiC's 4th generation SiC FETs use a "common source, common gate" topology, which integrates a SiC JFET and encapsulates it with a silicon MOSFET. Combined, the two provide the full benefits of wide bandgap technology - high speed and low loss and high temperature operation, while maintaining a simple, stable and robust gate drive with integrated ESD protection. These advantages can be quantified by A factor of quality (FoM), such as RDS(on)×A, which measures the conduction loss per unit of chip area. In this index, the 4th generation SiC FETs can reach the lowest value in the market at both high and low nude temperature. The FoM of RDS(on)×EOSS/QOSS is important in hard switching applications, and this value of the 4th generation SiC FETs is half that of the nearest competitor.

     The FoM of RDS(on)×COSS(tr) is critical in soft switching applications, and if you compare a UnitedSiC device rated at 750V with a competitor device rated at 650V, the value of the former is about 30% lower than the latter. For hard switching applications, integrated diodes of SiC FET are superior to competing Si MOSFET or SiC MOSFET technologies in terms of recovery speed and forward voltage drop. Additional advantages included in Generation 4 technology are reduced thermal resistance from the bare piece to the shell through advanced wafer thinning technology and the silver sintered patch process. These features enable maximum power output in demanding applications while achieving low chip temperature rise.

     With its latest improvements in switching efficiency and on-resistance, the new UnitedSiC SiC FETs are ideal for challenging emerging applications. These include traction drivers and on-board and non-on-board chargers in electric vehicles, as well as renewable energy inverters, power factor correction, telecommunication converters, and all stages of unidirectional and bidirectional power conversion in all AC/DC or DC/DC power conversions. Mature applications can also benefit from using this device - efficiency can be easily improved with its backward compatibility with Si MOSFET and IGBT gate drivers, as well as the mature TO-247 package.

     As Chris Dries, UnitedSiC President and CEO, said, "UnitedSiC's 4th generation SiC FETs are undoubtedly the performance leader among competing technologies and set a new benchmark for wide bandgap switching technology. The added product range now offers more options for all performance and budget specifications as well as a wider range of applications."