Transphorm releases 4-pin TO-247 package

     Transphorm has announced two new SuperGaN devices in the 4-pin TO-247 package (TO-247-4L). The newly released TP65H035G4YS and TP65H050G4YS FET devices have 35 milliohm and 50 milliohm on-resistance, respectively, and are equipped with a Kelvin source extreme to provide customers with more comprehensive switching capabilities with lower energy losses. The new products will use Transphorm's proven silicon substrate gallium nitride manufacturing process, which is highly reliable and cost-effective, making it ideal for mass production on existing silicon-based production lines.

     Transphorm's 4-pin SuperGaN devices are available as an original design option or as a direct replacement for existing 4-pin silicon and SiC devices in data centers with power levels of 1 kW and above, renewable energy and a variety of industrial applications. The 4-pin configuration further improves switching performance, providing flexibility to users. In a hard switch synchronous boost converter, the 35 milliohMs SuperGaN 4-pin FET device has 15% less loss at 50 kilohertz (kHz) and 27% less loss at 100 kHz compared to a SiC MOSFET with comparable on-resistance.

     Philip Zuk, senior vice president of Business Development and Marketing at Transphorm, said: "Transphorm continues to expand its product line and bring a diverse range of gallium nitride field-effect transistors (GaN FETs) to market. Regardless of a customer's design needs, Transphorm helps customers take full advantage of the performance benefits of the SuperGaN platform. SuperGaN in the four-pin TO-247 package offers designers and customers the flexibility TO achieve lower power system losses with minimal design modifications (or no design modifications at all) to the systems of silicon or silicon carbide devices. "Transphorm is accelerating into higher power applications, and these new devices are an important addition to the company's portfolio."