Transphorm launches TolL-packaged SuperGaN FETs for energy-intensive AI applications

     Transphorm, a leading global supplier of gallium nitride (GaN) power semiconductors, announced the launch of three Toll-packaged SuperGaN FETs with on-resistance of 35, 50 and 72 milliohm. Transphorm's TOLL package configuration is industry standard, meaning the Toll-packaged SuperGaN power tube can be used as a direct replacement for any e-mode TOLL solution. The new device also has Transphorm's proven high voltage dynamic (switching) on-resistance reliability - a reliability that is lacking with mainstream contract e-mode gallium nitride on the market.

     The three surface-mount devices (SMDS) support higher power applications with an average operating power range of 1 to 3 kW, where power systems are commonly used in high-performance areas such as computing (artificial intelligence, servers, telecommunications, data centers), energy and industrial (photovoltaic inverters, servo motors), and other broad industrial markets. Gallium nitride currently has a global addressable market size (TAM) of $2.5 billion in this market segment. Notably, the new power device is the best solution for today's rapidly evolving artificial intelligence (AI) systems, which rely on Gpus that consume 10 to 15 times more power than traditional cpus.

     Transphorm's high-power gallium nitride devices are now being used by mainstream customers in a variety of high-performance sectors to power their high-performance systems, including data center power supplies, high-power esports Psus, UPS, and micro-inverters. The new TOLL package can also be used in DC-DC converters and on-board charger applications for electric vehicles, as the core SuperGaN chip is certified to the automotive industry (AEC-Q101) standard.

     The SuperGaN FET in TOLL form is the sixth package type introduced by Transphorm, giving customers the widest range of package options to meet their diverse design needs. As with all Transphorm products, the TOLL package takes advantage of the performance and reliability inherent in the Transphorm normally closed d-mode SuperGaN platform. For a more detailed analysis of SuperGaN versus e-mode Gallium nitride, download Transphorm's latest white paper, "The Fundamental Benefits of Normally-off D-Mode Gallium Nitride Transistors." The technical white paper's conclusions are in line with a comparison report released by Transphorm earlier this year, which showed that a commercially available 280W esports laptop charger would perform better if it used a 72-milliohm SuperGaN FET as a direct substitute for the larger 50-milliohm e-mode device.