Toshiba's new IC chip achieves another success, which can greatly improve the battery life of wearable devices and IoT devices

Toshiba Electronic Devices & Storage Corporation ("Toshiba") today announced the launch of the TCK12xBG series of load switch ICs that support extremely low quiescent current[1] and a rated output current of 1A. Housed in a compact WCSP4G package, this family of ICs enables product developers to design innovative next-generation wearables and IoT devices with lower power consumption and longer battery life. The product supports mass shipments today.

The TCK12xBG series uses a new drive circuit with a typical on-quiescent current of 0.08nA [1]. Compared to Toshiba's current product, the TCK107AG, the quiescent current of the new series is reduced by approximately 99.9%, achieving a significant improvement in energy efficiency, so the runtime of wearable and IOT devices powered by small batteries will be significantly improved.

WCSP4G is a new type of package specially developed for this product, which is about 34% smaller than TCK107AG, only 0.645mm×0.645mm, which is convenient for small circuit board installation. The device-specific backside coating is designed to support easy mounting, even for such tiny chips without worrying about chip damage during mounting.

Toshiba plans to launch three ICs of this series: the TCK127BG that starts automatic discharge when the high level is active; the TCK126BG that does not start automatic discharge when the high level is active; and the TCK128BG that starts automatic discharge when the low level is active. This family of devices offers product developers and designers the freedom to choose the best load switch IC for their design requirements.

Toshiba will continuously improve low quiescent current technology products, promote device miniaturization and reduce power consumption, and contribute to a sustainable future.

Application

Wearable devices, IoT devices, smartphones (sensor power switches, etc.)

●Replace the load switch circuit composed of discrete semiconductor devices such as MOSFETs and transistors

Characteristic

●Ultra-low quiescent current (on state)[1]: IQ=0.08nA (typ.)

●Low standby current (off state): IQ(OFF)+ISD(OFF)=13nA (typ.)

●Compact WCSP4G package: 0.645mm × 0.645mm (typ.), thickness: 0.465mm (max.)

●Backside coating reduces damage during board mounting