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Toshiba introduces thin-package high peak output current optocoupler for IGBT/MOSFET gate Drive

Aug 8 2022 2022-08 Semiconductors Toshiba Semiconductor and Storage
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Toshiba Electronics Components and Storage Co., LTD has introduced two optocouplings in thin SO6L package, "TLP5705H" and "TLP5702H", which can be used as insulated gate driver ics in small IGBT/MOSFET

     Toshiba Electronic Components and Storage Device Co., LTD., announced the launch of two optocouplings in thin SO6L package, "TLP5705H" and "TLP5702H", which can be used as insulated gate driver ics in small IGBT/MOSFET. Volume shipments of both devices began recently.


     The TLP5705H is Toshiba's first product to offer a ±5.0A peak output current rating in a thin package (SO6L) with a thickness of only 2.3mm (Max). Small and medium-sized inverters and servo amplifiers, which traditionally use buffer circuits for current amplification, can now drive their IGBT/MOSFET directly through this optocoupler without any buffer. This will help reduce the number of parts and miniaturize the design.

 

     The peak output current rating of TLP5702H is ±2.5A. The SO6L package is compatible with Toshiba's traditional SDIP6 package pads for easy replacement of existing Toshiba products. The SO6L is thinner than the SDIP6, providing greater flexibility in the layout of circuit board components, and supports backside mounting of the board, or for new circuit designs where the device is highly constrained.

 

     Both optocouplers have a maximum operating temperature rating of 125 ° C (Ta = -40 ° C to 125 ° C), making it easier to design and maintain temperature margins. Toshiba also offers the TLP5702H (LF4) and TLP5705H (LF4), with a lead molding option in SO6L (LF4) package.

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