Toshiba Launches New Press-Fitting IEGT-ST2000GXH32 Contributing to Miniaturization and High Efficiency of Industrial Equipment

     Toshiba Electronic Devices & Storage Corporation has started mass production of the press-fit injection enhancement gate transistor (IEGT) "ST2000GXH32" using a trench-type IEGT chip and a newly developed high-speed diode chip for high-voltage converters. This product has a collector-emitter voltage rating of 4500 V and a collector current (DC) rating of 2000 A.

     The cathode structure in the diode suppresses voltage oscillations during reverse recovery, improving reverse recovery tolerance. The newly developed voltage blocking structure realizes high temperature withstand voltage. Compared with Toshiba's existing products [1], the new product ST2000GXH32 suppresses voltage oscillation at small reverse recovery currents. This allows the use of a small gate drive resistor (RG(on) ) and reduces turn-on switching losses[2][3] (E on ) from 12.0 J to 8.4 J (typ) by about 30%. In addition, the improved cathode increased peak power during reverse recovery by approximately 29%. Additionally, the ST2000GXH32's junction temperature rating (T j ) has been increased from 125 °C to 150 °C (max) by improving the diode's high temperature tolerance. The ST2000GXH32 contributes to the miniaturization and energy saving of high voltage industrial equipment such as DC transmission, static var compensators, motor drive inverters and converters.