Toshiba Launches New 1200V and 1700V Silicon Carbide MOSFET Modules to Enable Smaller, Higher Efficiency Industrial Equipment

     Toshiba Electronic Components and Storage Corporation announced the launch of two new silicon carbide (SiC) MOSFET dual modules - "MG600Q2YMS3" and "MG400V2YMS3": the former has a rated voltage of 1200V and a rated drain current of 600A; the latter has a rated voltage of 600A. is 1700V and the rated drain current is 400A. As Toshiba's first products with the above rated voltages, they form a lineup of 1200V, 1700V and 3300V devices together with the previously released MG800FXF2YMS3.

     The two new modules are compatible with the widely used silicon (Si) IGBT modules in terms of mounting. The low-loss nature of the two new modules addresses the need for increased efficiency and reduced size in industrial equipment such as converters and inverters for rail vehicles and renewable energy power generation systems.

Application:

- Inverters and converters for rail vehicles

- Renewable energy power generation system

- Motor control equipment

- High frequency DC-DC converter

Characteristic:

- Mounting method compatible with Si IGBT modules

- Lower losses than Si IGBT modules

MG600Q2YMS3

VDS(on)sense=0.9V (typ.)@ID=600A, Tch=25℃

Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150℃

MG400V2YMS3

VDS(on)sense=0.8V (typ.)@ID=400A, Tch=25℃

Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150℃

- Built-in NTC thermistor