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Toshiba Introduces Thin Package High Peak Output Current Optocouplers for IGBT/MOSFET Gate Drives

Apr 3 2022 2022-04 Semiconductors Toshiba Semiconductor and Storage
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Toshiba Electronic Devices & Storage Corporation ("Toshiba") today announced the launch of two optocouplers in a thin SO6L package, "TLP5705H" and "TLP5702H", which can be used as insulated gate drivers in small IGBT/MOSFET IC.

     Toshiba Electronic Devices & Storage Corporation ("Toshiba") today announced the launch of two optocouplers in a thin SO6L package, "TLP5705H" and "TLP5702H", which can be used as insulated gate drivers in small IGBT/MOSFET IC. 

     The TLP5705H is Toshiba's first product to provide a ±5.0A peak output current rating in a thin package (SO6L) only 2.3mm (max) thick. Equipment such as small and medium-sized inverters and servo amplifiers that traditionally use snubber circuits for current amplification can now directly drive their IGBTs/MOSFETs through the optocoupler without any buffers. This will help reduce part count and enable design miniaturization.

     The peak output current rating of the TLP5702H is ±2.5A. The SO6L package is compatible with the pads of Toshiba's traditional SDIP6 package [1], making it easy to replace Toshiba's existing products [2]. Thinner than SDIP6, SO6L provides greater flexibility in board assembly layout and supports board backside mounting, or for new circuit designs where device height is limited.

     Both optocouplers have a maximum operating temperature rating of 125°C (Ta = -40°C to 125°C), making it easier to design and maintain temperature margins. In addition, Toshiba offers the same family of devices including the TLP5702H (LF4) and TLP5705H (LF4) with lead forming options in the SO6L (LF4) package.

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