Toshiba Introduces New MOSFET Gate Driver IC to Help Reduce Device Size

     Toshiba Electronic Devices & Storage Corporation announced the launch of the "TCK421G", the first product in its new "TCK42xG series" MOSFET gate driver ICs for 20V power supply lines. This family of devices is designed to control the gate voltage of an external N-channel MOSFET (based on the input voltage) and has an overvoltage lockout feature.

     By working with external N-channel MOSFETs connected back-to-back, the TCK421G is suitable for configuring power multiplexer circuits or load switch circuits with reverse current blocking. It has a built-in charge pump circuit, supports a wide input voltage range of 2.7V to 28V, and provides a stable voltage for the gate-source voltage of the external MOSFET after intermittent operation. This approach allows switching of high currents.

     The TCK421G is packaged in WCSP6G[1], one of the smallest packages in the industry[2]. This facilitates the high-density placement of the TCK421G on small devices such as wearables and smartphones, thereby reducing the size of these devices.

     Toshiba will continue to develop the TCK42xG series and plans to launch a total of six products. The overvoltage lockout of the TCK42xG series will support input voltages from 5V to 24V. Two types of gate output voltages of 5.6V and 10V are available for different gate-source voltages in external MOSFETs. Overvoltage lockout and gate output voltage can be selected according to user specific equipment.

Application:

- Wearable device

- smart phone

- laptop, tablet

- storage devices, etc.

New Product Line Features:

- Built-in charge pump circuit, gate-source voltage (5.6V, 10V) depends on input voltage

- Overvoltage lockout supports 5V to 24V

- Low input shutdown current: IQ(OFF)=0.5μA (max) when VIN=5V, Ta=-40℃ to 85℃