Toshiba Introduces New 1200V and 1700V Silicon Carbide MOSFET Modules

     Toshiba Electronic Components & Storage Corporation announced the launch of two new silicon carbide (SiC) MOSFET dual modules - "MG600Q2YMS3" and "MG400V2YMS3": the former has a rated voltage of 1200V and a rated drain current of 600A; the latter has a rated voltage of 600A. is 1700V and the rated drain current is 400A. As Toshiba's first products with the above rated voltages, they form a lineup of 1200V, 1700V and 3300V devices together with the previously released MG800FXF2YMS3.

     The two new modules are compatible with the widely used silicon (Si) IGBT modules in terms of mounting. The low-loss nature of the two new modules addresses the need for increased efficiency and reduced size in industrial equipment such as converters and inverters for rail vehicles and renewable energy power generation systems.