Toshiba Introduces 1200V Silicon Carbide MOSFETs for High Efficiency Power Supplies

     Toshiba Electronic Components & Storage Corporation launched the 1200V silicon carbide (SiC) MOSFET "TW070J120B". This product is aimed at industrial applications such as large-capacity power supplies. The power MOSFET adopts the new material SiC. Compared with conventional silicon (Si) MOSFET and IGBT products, it has the characteristics of high withstand voltage, high-speed switching and low on-resistance, so it is beneficial to reduce Power consumption, streamlined system.

     The new device is produced using Toshiba's second-generation chip design[1] that improves the reliability of SiC MOSFETs, featuring low input capacitance, low gate input charge, and low drain-source on-resistance. Compared with Toshiba's 1200V silicon insulated gate bipolar transistor (IGBT) "GT40QR21", its turn-off switching loss is reduced by about 80%, the switching time (fall time) is shortened by about 70%, and it can operate at a drain current of not more than 20A provides low turn-on voltage [2].

     Its gate threshold voltage is set in a higher voltage range of 4.2V to 5.8V, which helps reduce the risk of failure (unintentional turn-on or turn-off). In addition, the built-in SiC Schottky Barrier Diode (SBD) with low forward voltage also helps reduce power consumption. In industrial applications such as high-capacity AC-DC converters, photovoltaic inverters, and high-capacity bidirectional DC-DC converters, this new MOSFET will not only improve efficiency by reducing power consumption, but also help shrink devices size.