Silicon carbide (SiC) MOSFETs with excellent switching performance

Mar 12 2023 2023-03 Semiconductors ON Semiconductor

NVBG025N065SC1 Silicon Carbide (SiC) MOSFET has excellent switching performance and higher reliability compared to silicon. Anson Semiconductor NVBG025N065SC1 has a low on-resistance and a compact chip size that ensures low capacitance and low gate charge

ON semiconductor NVBG025N065SC1 Silicon Carbide (SiC) MOSFETs have excellent switching performance and higher reliability compared to silicon. Anson Semiconductor NVBG025N065SC1 has a low on-resistance and a compact chip size that ensures low capacitance and low gate charge. System advantages include high efficiency, fast operating frequency, high power density, low EMI, and small system size.

Features

● Typical value RDS(on) =19m (VGS=18V)
● Typical value RDS(on) =25m (VGS=15V)
● Ultra-low grid charge (QG(tot)=164nC)
● Low output capacitance (Coss=278pF)
● 100% avalanche tested
● Comply with AEC-Q101 standard and have PPAP function
● Comply with the RoHS directive

Applications

● Car onboard charger
● Automotive DC/DC converter for electric vehicle (EV)/ Hybrid electric vehicle (HEV)

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