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Samsung expands lineup of automotive memory products

Jun 9 2022 2022-06 Power Samsung
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Samsung has unveiled a series of high-end in-car memory solutions designed for next-generation autonomous electric vehicle applications. The new product lineup includes 256GB PCIe Gen3 NVMe Ball Grid Array (BGA) package SSD for high-performance in-vehicle infotainment systems, 2GB GDDR6 and 2GB DDR4 DRAM products, And 2GB GDDR6 DRAM and 128GB UFS (general purpose flash memory) for autonomous driving systems

     Samsung has launched a series of high-end automotive memory solutions designed for next-generation autonomous electric vehicle applications. The new product lineup includes 256GB PCIe Gen3 NVMe ball grid array (BGA) packaged SSDs for high-performance in-vehicle infotainment systems, 2GB GDDR6 and 2GB DDR4 DRAM products, and 2GB GDDR6 DRAM and 128GB UFS ( General Purpose Flash) products.

 

     Jinman Han, executive vice president and director of global memory sales and marketing at Samsung Electronics, said: "With the popularity of electric vehicles and the rapid development of infotainment and autonomous driving systems, semiconductor automotive platforms are facing a paradigm shift that has traditionally been the case for 7 years. The ~8 year replacement cycle has now been compressed to 3~4 years, at the same time performance and capacity are ramping up to levels common for server applications. Samsung's enhanced lineup of memory solutions will be the server on wheels that accelerates 'The main catalyst for the changing times."

 

    At the same time, advanced features of infotainment systems, such as high-definition maps, video streaming and 3D gaming, and the increasing use of autonomous driving systems have driven the entire automotive industry to demand high-capacity, high-performance solid-state drives (SSDs) and Graphics DRAM products. need. Samsung pioneered UFS solutions for automotive applications in 2017. Today, Samsung is well-positioned to offer total memory solutions including new automotive-grade SSDs and GDDR6 DRAM.

 

     The internal controller and firmware of Samsung's 256GB BGA-packaged SSD products are independently developed to achieve performance optimization. The sequential read speed is 2100 MB/s and the sequential write speed is 300 MB/s, which are 7 times and 2 times faster than eMMC respectively. In addition, 2GB GDDR6 DRAM has a data rate of up to 14Gbps per pin, this ultra-high speed and high bandwidth can support complex processing of various multimedia applications and big data processing for autonomous driving, helping to provide more secure, dynamic, convenient driving experience. In addition, some potential other applications can also be supported, such as recording driving information for inference training of self-driving cars, OTA software updates, etc.

 

     In addition, Samsung's new solution is qualified to AEC-Q100 - the global automotive reliability standard - for stable operation in extreme temperatures from -40°C to +105°C, which is an important milestone for scalable automotive semiconductors. key indicator. In recent years, with the increasing deployment of sensors in autonomous vehicles to continuously monitor the surrounding environment, it has become even more important to interpret and predict data through high-speed processing for safer driving. Samsung's automotive memory solutions, which were previously highly regarded in servers and AI accelerators, are paving the way for safer autonomous driving.

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