Samsung 14nm EUV DDR5 DRAM officially mass-produced

     Samsung announced that it has started mass production of 14 nanometer (nm) DRAM based on extreme ultraviolet (EUV) technology. Following the launch of the first EUV DRAM by Samsung in March last year, the number of EUV layers has been increased to 5 layers, providing its DDR5 solution with a more high-quality and advanced DRAM process.

     "Samsung has been active in the global DRAM market for nearly three decades by pioneering key patterning technology," said Jooyoung Lee, senior vice president and head of DRAM products and technology at Samsung Electronics. Samsung will continue to provide highly differentiated memory solutions based on a new technological milestone, enabling a more miniaturized 14nm process that cannot be achieved with conventional Argon Fluoride (ArF) processes , fully meet the demand for higher performance and larger capacity in the data-driven era such as 5G, artificial intelligence and the metaverse.”

     As DRAM processes continue to shrink into the 10nm range, EUV technology is becoming increasingly important as it improves patterning accuracy for higher performance and higher yields. By applying five EUV layers in 14nm DRAM, Samsung achieved its own highest unit capacity, while improving overall wafer productivity by about 20%. In addition, the 14nm process can help reduce power consumption by nearly 20 percent compared to previous-generation DRAM processes.

     Based on the latest DDR5 standard, Samsung's 14nm DRAM will help unleash speeds unheard of in previous products: up to 7.2Gbps, more than twice as fast as DDR4's 3.2Gbps.

     Samsung plans to expand its 14nm DDR5 portfolio to support data center, supercomputer and enterprise server applications. In addition, Samsung is expected to increase the capacity of its 14nm DRAM chips to 24Gb to better meet the rapidly growing data demands of global IT systems.