STMicroelectronics introduces new RF LDMOS power transistor

STMicroelectronics' STPOWER LDMOS transistor product family has recently expanded to include three different product families optimized for a wide range of commercial and industrial radio frequency power amplifiers (PA).

● DCH series products with output power between 8W-300W are suitable for industrial, scientific, medical, satellite, avionics and radar equipment with frequencies up to 4GHz

● The IDDE family includes 10W-700W products for commercial, industrial and scientific broadband communication equipment with a maximum frequency of 1.5GHz

● The IDEV series is suitable for industrial, scientific and medical applications up to 250MHz, including driving high-power CO2 lasers, plasma generators and MRI systems, as well as avionics and radar equipment up to 1.5GHz

STPOWER LDMOS products are characterized by high energy efficiency and low thermal resistance, packaged chips that can handle high RF power, short on-channel and high breakdown voltage, which make RF power amplification solutions cost-effective, low power consumption and high reliability.

The new STPOWER LDMOS IDCH and IDDE series are 28V/32V common source N-channel enhanced transversally diffused metal oxide field effect RF power transistors, expanding the product's target application range. The IDCH range ranges from 8W to 300W and is specifically designed for applications with a maximum operating frequency of 4GHz, including 2.45GHz industrial, scientific and medical (ISM) equipment, wireless infrastructure, satellite communications, avionics and radar equipment. This series of LDMOS devices is suitable for all types of modulation formats.

The IDDE family includes 10W-700W products for commercial, industrial and scientific broadband communications up to 1.5GHz, capable of withstanding 10:1 load VSWR(voltage standing wave ratio) at all phases, suitable for all typical signal modulation formats, and suitable for most classes of RF power amplification, including Class A, Class AB and Class C. High energy efficiency minimizes the electrical energy required to reach the target output power, reduces operating costs and heat dissipation, simplifies thermal management design, and enables more compact systems.

St's IDEV family also introduced a new 50V common source N-channel enhanced transverse field-effect RF power transistor. The IDEV portfolio ranges from 15W to 2.2kW and is designed for use in industrial, scientific and medical devices with frequencies up to 250MHz, including drive high-power CO2 lasers, plasma generators, MRI systems, 88MHz - 108MHz broadcast FM radio transmitters. As well as avionics and radars with frequencies up to 1.5GHz. The series is suitable for all typical modulation formats as well as Class A, Class AB and Class C amplifiers.

In the high frequency (3-30MHz) to 250MHz frequency range, the powerful IDEV family is capable of delivering up to 2.2kW of continuous wave (CW) output power in only one ceramic package, thus reducing the total number of RF power transistors required for high-power applications such as broadcast transmitters. Energy efficiency of more than 82% helps to minimize the system's electrical energy requirements, and ensures reliable system operation and simple thermal management design.