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STMicroelectronics Introduces New RF LDMOS Power Transistors

May 24 2022 2022-05 Semiconductors STMicroelectronics
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STMicroelectronics has recently added several new products to its STPOWER LDMOS transistor product family, which consists of three different product families optimized for various commercial and industrial RF power amplifiers (PAs).

     STMicroelectronics has recently added several new products to its STPOWER LDMOS transistor product family, which consists of three different product families optimized for various commercial and industrial RF power amplifiers (PAs). STPOWER LDMOS products feature high energy efficiency and low thermal resistance, packaged chips that can handle high RF power, combined with short on-channel and high breakdown voltage, these features make RF power amplification solutions cost-effective, low power consumption and high reliability sex.

     The new STPOWER LDMOS IDCH and IDDE series are 28V/32V common source N-channel enhancement mode laterally diffused metal oxide field effect RF power transistors, expanding the target application range of the products. The output power of the IDCH series is 8W to 300W and is specially designed for applications operating up to 4GHz, including 2.45GHz industrial, scientific and medical (ISM) equipment, wireless infrastructure, satellite communications, avionics and radar equipment. This family of LDMOS devices is suitable for all types of modulation formats.

     The IDDE series includes 10W-700W products for commercial, industrial and scientific broadband communications up to 1.5GHz, can withstand 10:1 load VSWR (voltage standing wave ratio) in all phases, and is suitable for all typical signal modulation formats, Also suitable for most classes of RF power amplification, including Class A, Class AB, and Class C. High energy efficiency minimizes electrical energy required to reach target output power, reduces operating costs and heat dissipation, simplifies thermal management design, and enables more compact systems.

     ST's IDEV family also introduces a new 50V common-source N-channel enhancement-mode lateral field-effect RF power transistor. The IDEV product portfolio has an output power range of 15W to 2.2kW and is designed for use in industrial, scientific and medical equipment at frequencies up to 250MHz, including driving high power CO2 lasers, plasma generators, MRI systems, broadcast FM radio transmissions at 88MHz–108MHz aircraft, as well as avionics and radar at frequencies up to 1.5GHz. This series is suitable for all typical modulation formats as well as Class A, AB and C amplifiers.

     In the high frequency (3-30MHz) to 250MHz frequency range, the powerful IDEV series is capable of delivering up to 2.2kW of continuous wave (CW) output power in a single ceramic package, thus reducing the need for high power applications such as broadcast transmitters The total number of RF power transistors required. Energy efficiency above 82% helps minimize system power requirements and ensures reliable system operation and simple thermal management design.

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