STMicroelectronics Dual-Channel Gate Driver Optimizes and Simplifies SiC and IGBT Switching Circuits

     The IGBT driver STGAP2HD and the SiC MOSFET driver STGAP2SICD utilize ST's latest galvanic isolation technology and are packaged in a wide body SO-36W, capable of withstanding 6kV transients. In addition, ±100V/ns dv/dt transient tolerance prevents stray conduction under high electrical noise conditions. Both drivers provide gate control signals up to 4A, and dual output pins bring more flexibility to the gate drive, allowing separate adjustment of turn-on and turn-off times. Active Miller clamping prevents gate voltage spikes during fast commutation of the half-bridge topology.

     Circuit protection features include thermal protection, a watchdog for safe operation, and an undervoltage lockout (UVLO) mechanism for each channel to prevent the driver from starting up in a dangerously inefficient mode. According to the technical requirements of SiC MOSFETs, STGAP2SICD increases the threshold voltage of UVLO to optimize the energy efficiency of the transistor.

     Each device has an iLOCK pin that turns on both channels simultaneously in dual low-side asymmetric half-bridge applications and an interlock protection mechanism to prevent shoot-through current in conventional half-bridge circuits. Both drivers are rated to 1200V on the high voltage rail, have an input-to-output propagation time of 75ns, and have high PWM control accuracy.

     ST's new dual-channel galvanically isolated gate drivers feature dedicated shutdown and brake pins, as well as standby power-saving pins, targeting power supplies, motors, inverters, welders and chargers. In addition, the input pins are compatible with TTL and CMOS logic signals down to 3.3V to simplify the connection of the driver to a host microcontroller or DSP processor.