STGAP2SICD 6 kV Galvanically Isolated Dual Gate Driver for SiC FETs

     STMicroelectronics' STGAP2SiCD is a 6 kV galvanically isolated dual-channel gate driver in a wide SO-36 package suitable for driving SiC power transistors. It provides galvanic isolation between each gate drive channel and low voltage control and interface circuits. STGAP2SiCD uses the latest 6 kV galvanic isolation technology to provide a complete set of protections and maximum drive flexibility.

     The gate driver features 4 A capability and rail-to-rail output, making it suitable for medium to high power applications such as power conversion, industrial drives and inverters, and can sustain high voltage rails up to 1200 V.

     The dV/dt transient immunity is ±100 V/ns over the entire temperature range, ensuring excellent robustness to voltage transients. The device features separate sink and source options for easy gate drive configuration and Miller clamping to prevent gate spikes during fast commutation in half-bridge topologies. CMOS/TTL compatible logic inputs down to 3.3 V ensure direct interface with microcontrollers and DSP peripherals.

     The device integrates specific SiC undervoltage lockout and thermal shutdown protection features for easy design of high reliability systems. In a half-bridge topology, an interlock function prevents the outputs from being high at the same time, thus avoiding a shoot-through condition in the event of an erroneous logic input command. Dedicated configuration pins can disable the interlock feature to allow independent and parallel operation of the two channels. Input-to-output propagation delays are within 75 ns, providing precise PWM control. Has Standby Mode to Reduce Power Consumption