
Renesas Electronics announced the introduction of 100V high-power N-channel MOSFETs - RBA300N10EANS and RBA300N10EHPF - based on the new MOSFET wafer manufacturing process, REXFET-1. Ideal high current switching performance for motor control, battery management systems, power management and charge management applications. Terminal equipment based on this innovative product will be widely used in electric vehicles, electric bicycles, charging stations, power tools, data centers and uninterruptible power supplies (UPS).
The new MOSFET wafer fabrication process (REXFET-1) developed by Renesas significantly reduces the on-resistance of the new product (the resistance between the drain and the source when the MOSFET is on) by 30%; Lower on-resistance helps to significantly reduce power losses in customer system designs. The REXFET-1 process also reduces the new MOSFETs' Qg characteristics (the amount of charge required to apply voltage to the gate) by 10 percent and Qgd (the amount of charge required to be injected into the gate during the "Miller Platform" phase) by 40 percent.
In addition TO excellent electrical characteristics, Renesas' new RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with other manufacturers and 50 percent smaller than traditional TO-263 packages. The TOLL package also features wettable flanks for easy optical inspection.
Avi Kashyap, Vice President of Discrete Power Solution BU at Renesas said: "Over the years, Renesas has accumulated a wealth of experience and technical advantages in the field of MOSFET, and with our strong manufacturing capabilities and the availability of multiple high-capacity plants, Renesas is committed to providing customers with excellent products and services."
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